Design and Applications of Al/InSe/BN/Ag Hybrid Device

In this paper, a hybrid device made of Ag/BN Schottky barrier and anisotype InSe/BN heterojunction is designed and characterized. The design of the energy band diagram of the device revealed a valance band splitting at the InSe/BN interface and a barrier height at the Ag/BN junction of 3.04 and 6.49 eV, respectively. These parameters which were designed to force current conduction by tunneling were experimentally confirmed by the dark I-V characteristics which revealed an electric field assisted tunneling process. The hybrid device exhibited high/low current switching property at Vs = 2.60 V when forward biased. When the device was exposed to 850-nm lasers light, Vs regularly increased with increasing light power indicating the applicability of these devices as IR photodetectors. In addition, when it was used as capacitor and depleted with signal of frequency of 0.1 GHz and varying amplitude it showed good energy storing property with a quality factor of similar to 200. On the other hand, when the hybrid device was used as microwave resonator it behaves like bandstop filter that blocks signals of various notch frequencies in the range of 1.58-2.30 GHz. The features of the device are promising as they indicate the applicability of the Al/InSe/BN/Ag in communication technology.