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Fabrication and characterization of TO/GaSe/(Ag, Au) Schottky diodes

Authors: 
Qasrawi, AF
Journal Name: 
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 
21
Issue: 
6
Pages From: 
794
To: 
798
Date: 
Thursday, June 1, 2006
Keywords: 
GASE THIN-FILMS; OPTICAL-PROPERTIES; SEMICONDUCTOR-DETECTORS; BAND-GAP; TEMPERATURE; BEAMS
Abstract: 
The optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated glass substrates are presented for the purpose of using this material for the fabrication of metal-semiconductor devices. Specifically, the room temperature direct allowed and forbidden transition energy band gaps of glass/TO and glass/TO/GaSe films are estimated and found to exhibit values of 3.95 and 1.95 eV, respectively. The temperature dependence of the energy band gap of the glass/TO/GaSe is also studied in the temperature range of 295 - 450 K by means of optical transmittance and reflectance spectra. This study allowed the identification of the rate of change of the band gap with temperature as -5.0 x 10(-4) eV K-1 and the 0 K energy band gap as 2.1 eV. The above reported optical parameters of the glass/TO/GaSe structure seem to be suitable for semiconductor device production such as solar cell converters, metal - insulator - semiconductor (MIS), metal-oxide-semiconductor (MOS), MOSFET, etc devices. As an application, we have used the glass/TO/GaSe substrate for fabricating Schottky diodes using Ag and Au point contacts. The diodes are characterized by measuring the current (I) - voltage (V) characteristics at room temperature. The I - V curves exhibit rectifying properties. The I-V data analysis in the Schottky region (below 1.0 V) revealed barrier heights of 0.60 and 0.73 eV for Ag and Au point contacts, respectively.