Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals

The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 20.93 eV and 4.01 eV, 6.21 and 2.49, respectively.