Structural and Optoelectronic Properties of MoO3/CuSe Interfaces

In this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO3 substrate. The films are studied by the X‐ray diffraction, scanning electron microscopy, energy dispersive X‐ray spectroscopy and ultraviolet‐visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO3 amorphous substrates. Optically, the MoO3/CuSe films are found to exhibit conduction ( Δ E c ) and valence ( Δ E v ) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability ( R λ ) of MoO3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The Δ E c , Δ E v , and R λ values are significantly high and nominate the MoO3/CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO3/CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude‐Lorentz modeling of the imaginary part of the dielectric constant for the MoO3/CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm2 V−1 s−1 and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.