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Structural, electrical and anisotropic properties of Tl4Se3S chain crystals

Authors: 
Qasrawi, A. F.
Gasanly, N. M.
Journal Name: 
MATERIALS RESEARCH BULLETIN
Volume: 
44
Issue: 
10
Pages From: 
2009
To: 
2013
Date: 
Thursday, October 1, 2009
Keywords: 
Semiconductors; Crystal growth; X-ray technique; Electrical properties
Abstract: 
The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.