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Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals

Authors: 
Qasrawi, A. F.
Gasanly, N. M.
Journal Name: 
PHYSICA B-CONDENSED MATTER
Volume: 
407
Issue: 
14
Pages From: 
2749
To: 
2752
Date: 
Sunday, July 15, 2012
Keywords: 
Varactor; TlGaSe2; Capacitance; Barrier height
Abstract: 
The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.