Formation Mechanism, Structural and Optoelectronic Properties of As2Se3/CdS Heterojunctions Prepared by Physical Vapor Deposition Technique

Authors:

Najla M. Khusayfan

H. K. Khanfar

ISSN:

1543-186X

Journal Name:

Journal of Electronic Materials

Volume:

0

Issue:

0

Pages From:

1

To:

7

Date:

Monday, April 22, 2019

External Link:

https://doi.org/10.1007/s11664-019-07222-6