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Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K

Authors: 
I. Alawneh, E. Simoen, S. Biesemenms, K. De Meyer and C. Claeys
Journal Name: 
Journal de Physique IV
Volume: 
8
Issue: 
1998
Pages From: 
3
To: 
3
Date: 
Wednesday, July 8, 1998