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Comparison of the freeze-out in Indium and B doper n MOSFETs in the temperature range 4.2—300 K

Authors: 
I. Alawneh, E. Simoen, S. Biesemenms, K. De Meyer and C. Claeys
Conference: 
European workshop on low temperature Electronics, WOLT 3
Location: 
San Miniato, Tuscany Italy
Date: 
Monday, June 1, 1998