Theoretical triangular quantum well model for AlGaN/GaN HEMT structure used as polar liquid sensor

Authors:

S. Rabbaa

J. Stiens

Conference:

2012 IEEE International Conference in Semiconductor Electronics (ICSE)

Location:

Kuala Lumpur: Malaysia

Date:

Friday, September 21, 2012

External Link:

http://ieeexplore.ieee.org/document/6417164/